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hexfet power mosfet d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 n-channel mosfet p-channel mosfet parameter max. units n-channel p-channel v ds drain-source voltage 30 -30 v i d @ t a = 25c continuous drain current, v gs 2.7 -2.0 i d @ t a = 70c continuous drain current, v gs 2.1 -1.6 a i dm pulsed drain current 21 -16 p d @t a = 25c maximum power dissipation 1.25 w p d @t a = 70c maximum power dissipation 0.8 w linear derating factor 10 mw/c v gs gate-to-source voltage 20 v v gsm gate-to-source voltage single pulse tp<10 s 30 v dv/dt peak diode recovery dv/dt 5.0 v/ns t j , t stg junction and storage temperature range -55 to + 150 c soldering temperature, for 10 seconds 240 (1.6mm from case) thermal resistance parameter max. units r ja maximum junction-to-ambient 100 c/w

n-ch p-ch v ds 30 -30 v r ds(on) max (@v gs = 10v) 0.11 0.2 q g (typical) 7.8 7.5 nc i d (@t a = 25c) 2.7 -2.0 a features benefits industry-standard pinout micro-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability form quantity tube/bulk 95 IRF7509PBF-1 tape and reel 4000 irf7509trpbf-1 package type standard pack orderable part number IRF7509PBF-1 micro-8 base part number

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! fig 1. typical output characteristics fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 0.1 1 10 20 s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 0.1 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20 s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 0.1 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20 s pulse width ds fig 4. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a fig 5. normalized on-resistance vs. temperature 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 1.7a d fig 6. typical on-resistance vs. drain current 0 2 4 6 8 10 0.060 0.100 0.140 0.180 0.220 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 10v vgs = 4.5v +,-

! fig 8. maximum safe operating area fig 9. typical capacitance vs. drain-to-source voltage fig 10. typical gate charge vs. gate-to-source voltage 0 100 200 300 400 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 024681012 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 v = 24v v = 15v i = 1.7a ds ds d fig 7. typical on-resistance vs. gate voltage 0 4 8 12 16 0.060 0.080 0.100 0.120 0.140 r , drain-to-source on resistance v , gate-to-source voltage (v) gs ds (on) id = 2.7a +,- 0.1 1 10 100 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms

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! fig 11. typical output characteristics fig 13. typical transfer characteristics fig 12. typical output characteristics 0.1 1 10 0.1 1 10 d ds 20 s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 0.1 1 10 0.1 1 10 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 20 s pulse width t = 150c j 0.1 1 10 3.0 4.0 5.0 6.0 7.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20 s pulse width ds fig 14. typical source-drain diode forward voltage 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) fig 15. normalized on-resistance vs. temperature 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -1.2a d fig 16. typical on-resistance vs. drain current
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! fig 18. maximum safe operating area fig 17. typical on-resistance vs. gate voltage
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5,- fig 20. typical gate charge vs. gate-to-source voltage fig 19. typical capacitance vs. drain-to-source voltage fig 21. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0 4 8 12 16 20 024681012 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) v = -24v v = -15v ds ds i = -1.2a d for test circuit see figure 9 0 100 200 300 400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss n-p - channel 0.1 1 10 100 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms

! micro8 part marking information (lead-free) micro8 package outline dimensions are shown in milimeters (inches) inches millimeters min max min max a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x notes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 controlling dimension : inch. 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x part number example: t his is an irf 7501 lot code (xx) dat e code (yw) w = week y = year p = designates lead-free product (optional) 6 1996 g 1997 z y x 52 j h k 51 50 1999 2000 1998 ww = (27-52) if preceded by a letter wor k week c d a b w 29 c 2003 e d f 30 1995 1996 1994 a y b 27 28 2001 2002 ye ar y z x 25 26 0 8 7 9 24 1998 2000 1999 1997 ww = (1-26) if preceded by las t digit of calendar year week wor k b d c w a 02 2 2002 4 3 5 04 03 1994 1995 2003 1 y 01 ye ar 2001 yww = 9532 = ef date code examples: yww = 9503 = 5c note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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! micro8 tape & reel information 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. outline conforms to eia-481 & eia-541. 2. controlling dimension : millimeter. note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level micro-8

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